Umenzi : I-LG Semicon Co., Ltd. Ilizwe lokwenziwa : Inombolo yeCandelo laseMzantsi Korea : ? IFomu Factor : Iimpawu zeSIMM : 72iphini, EDO DRAM, Non-Parity Memory Umthamo : 16MB Ububanzi : 32bit Speed : 60ns(I-TRAC) I-Voltage : 5V Ukuqulunqwa kweChip : GM71C17400CJ6 × 8 Chip Yakha Unyaka / Iveki : 1998/27 Umthamo omnye weChip : 4M […]

Umenzi : Hyundai Electronics Industries Co., Ltd. Build Year : 1994 Ilizwe lokwenziwa : Inombolo yeCandelo laseMzantsi Korea : HYM532100AM-70 Form Factor : SIMM Memory type : EDO DRAM Memory Capacity : 4MB Bus type : Fast Page Memory (FPM) Error correction : Non-parity Pins : 72pin Bandwidth : 32bit Latency : 70ns (I-TRAC) I-Voltage […]

I-kmm591000an-7 idityaniswe i-km44000c1000aj-7 chips kunye ne-KM44C1000c1000cj-7 chip. I-kmm591000bn-7 idityaniswe nge-km4000b ye-km4000bj-7 chips kunye ne-km44c1000c1000cj-7 chip. Bayi-1MM i-Drams Slems eziveliswa ngu-Samsung Elektroniki. Inkampani yemveliso : I-Samsung Elektroniki yoNyaka : 1992 / 1993 Ilizwe lokwenziwa : Iimpawu zemodyuli ye-Korea yemodyuli : 30iphini, Smm, Umthamo weDlume […]

EDO DRAM has temporary memory space for faster data I/O. It is effective when the system cannot receive cache memory support. But if the system has cache memory, the effect of EDO DRAM is little. Umenzi : Hyundai Electronics Industries Co., Ltd. Yakha Unyaka/Iveki : 1997/32 Ilizwe lokwenziwa : eKorea (South Korea) Inombolo yendawo […]