Umenzi : I-LG Semicon Co., Ltd. Ilizwe lokwenziwa : Inombolo yeCandelo laseMzantsi Korea : ? IFomu Factor : Iimpawu zeSIMM : 72iphini, EDO DRAM, Non-Parity Memory Umthamo : 16MB Ububanzi : 32bit Speed : 60ns(I-TRAC) I-Voltage : 5V Ukuqulunqwa kweChip : GM71C17400CJ6 × 8 Chip Yakha Unyaka / Iveki : 1998/27 Umthamo omnye weChip : 4M […]

Umenzi : Hyundai Electronics Industries Co., Ltd. Build Year : 1994 Ilizwe lokwenziwa : Inombolo yeCandelo laseMzantsi Korea : HYM532100AM-70 Form Factor : SIMM Memory type : EDO DRAM Memory Capacity : 4MB Bus type : Fast Page Memory (FPM) Error correction : Non-parity Pins : 72pin Bandwidth : 32bit Latency : 70ns (I-TRAC) I-Voltage […]

KMM591000AN-7 is composed two KM44C1000AJ-7 chips and one KM44C1000CJ-7 chip. KMM591000BN-7 is composed with two KM44C1000BJ-7 chips and one KM44C1000CJ-7 chip. They are 1MB DRAM SIMMs produced by Samsung Electronics. Manufacturing Company : Samsung Electronics Manufactured Year : 1992 / 1993 Ilizwe lokwenziwa : South Korea Module Features : 30iphini, SIMM, Parity RAM Memory Capacity […]

EDO DRAM has temporary memory space for faster data I/O. It is effective when the system cannot receive cache memory support. But if the system has cache memory, the effect of EDO DRAM is little. Umenzi : Hyundai Electronics Industries Co., Ltd. Yakha Unyaka/Iveki : 1997/32 Ilizwe lokwenziwa : eKorea (South Korea) Inombolo yendawo […]