Igama lemveliso : Samsung 16MB SDRAM 16MB PC66 Ingxenye yenombolo : KMM366S203CTL-G0 uMvelisi : Samsung Electronics Co., Ltd. (I-SEC) Ilizwe lokwenziwa : UMzantsi Korea Yakha unyaka / iveki : 1998/09 Umthamo wedatha : 16MB Isantya sewotshi : 66Mhz (PC66) Iimbonakalo : 168 iphini, Unbuffered Non-ECC SDRAM DIMM Ukwakheka kwetshiphu yedatha : [I-KM48S2020CT-G10] × 8 iitshiphusi (2M […]

Igama lemveliso : LG SDRAM 16MB PC66 Ingxenye yenombolo : GMM2642233BLTG-10K 7101S uMvelisi : I-LG Semicon Co., Ltd. Ilizwe lokwenziwa : UMzantsi Korea Yakha unyaka / iveki : 1997/03 Umthamo wedatha : 16MB Isantya sewotshi : 66Mhz (PC66) Iimbonakalo : 168iphini, Unbuffered Non-ECC SDRAM DIMM Ukwakheka kwetshiphu yedatha : [GM72V16821BT10K] × 8 iitshiphusi (2M × 64bit) Nye […]

Umenzi : I-LG Semicon Co., Ltd. Ilizwe lokwenziwa : Inombolo yeCandelo laseMzantsi Korea : ? IFomu Factor : Iimpawu zeSIMM : 72iphini, EDO DRAM, Non-Parity Memory Umthamo : 16MB Ububanzi : 32bit Speed : 60ns(I-TRAC) I-Voltage : 5V Ukuqulunqwa kweChip : GM71C17400CJ6 × 8 Chip Yakha Unyaka / Iveki : 1998/27 Umthamo omnye weChip : 4M […]

EDO DRAM has temporary memory space for faster data I/O. It is effective when the system cannot receive cache memory support. But if the system has cache memory, the effect of EDO DRAM is little. Umenzi : Hyundai Electronics Industries Co., Ltd. Yakha Unyaka/Iveki : 1997/32 Ilizwe lokwenziwa : eKorea (Khoriya eseMzantsi ) Inombolo yendawo […]