Jina la bidhaa Samsung DDR3 SDRAM PC3-10600 Kumbukumbu ya 2GB (1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9 M378B5263DH1) Mtengenezaji Samsung Electronics Nchi ya utengenezaji Uchina Jenga mwaka/wiki 2010/38 Uwezo wa Data 2GB Kasi ya Saa 1333Mhz (PC3-10600) Vipengele vya 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM mchakato wa uzalishaji teknolojia 40nm Biti za data x64 Moduli ya ndani benki 8 Muundo wa chip ya data [SEC HCH9 K4B2G0846C] ✕ 8 chips […]

Many mainboards, supported early pentium CPU, usually had sync cache memory chips as CPU L2 cache. This sync cache module(COASt; Cache On A Stick) is external memory module used as additional CPU L2 cache. It maximizes the perfomance of the processor while the processor is waiting for instructions or data. L2 cache is used for operating […]

Kumbukumbu ya A-DATA Viesta DDR600 Viesta, katika moduli za kumbukumbu za DDR SDRAM, kwanza ilipata kasi ya saa ya 600Mhz na chipsi za kumbukumbu za Samsung TCCD. Uwezo wa data wa A-data Viesta ulikuwa 512MB au 256MB. Ilitumika zaidi kwa ovcrcclocking.   Jina la Bidhaa A-DATA Vitesta DDR600 512MB Sehemu ya Nambari MDOSSLF3H47A0B1G0Z Mtengenezaji A-DATA Nchi ya utengenezaji Mwaka wa Kujengwa kwa Taiwan 2004 Ina 184pin Unbuffer […]

KMM591000AN-7 is composed two KM44C1000AJ-7 chips and one KM44C1000CJ-7 chip. KMM591000BN-7 is composed with two KM44C1000BJ-7 chips and one KM44C1000CJ-7 chip. They are 1MB DRAM SIMMs produced by Samsung Electronics. Manufacturing Company : Samsung Electronics Manufactured Year : 1992 / 1993 Nchi ya utengenezaji : South Korea Module Features : 30pini, SIMM, Parity RAM Memory Capacity […]

Jina la bidhaa : ELPIDA 2GB 2Rx8 PC3-10600S-9-10-F1 Part Number : EBJ21UE8BFU0-DJ-F Manufacturer : ELPIDA Country of manufacture : Taiwan Build Year/Week : 2010/38 Kipengele cha Fomu : DDR3 SO-DIMM Features : 204pini, Non-ECC Memory Capacity : 2GB Max Data Rate : 1333Mbps Voltage : 1.5V Organization : 256M words × 64 bits, 2 ranks Chip Composition : J1108BFBG-DJ-F […]