Product name Samsung DDR3 SDRAM PC3-10600 2GB Memory (1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9 M378B5263DH1) Manufacturer Samsung Electronics Country of manufacture China Build year/week 2010/38 Data Capacity 2GB Clock speed 1333Mhz (PC3-10600) Features 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM Production process technology 40nm Data bits x64 Internal Module banks 8 डाटा चिप संरचना [SEC HCH9 K4B2G0846C] ✕ 8 चिप्स […]

धेरै मेनबोर्डहरू, प्रारम्भिक पेन्टियम CPU समर्थित, सामान्यतया सिंक क्यास मेमोरी चिप्स CPU L2 क्यासको रूपमा थियो. यो सिंक क्यास मोड्युल(COASt; स्टिकमा क्यास) अतिरिक्त CPU L2 क्यासको रूपमा प्रयोग गरिएको बाह्य मेमोरी मोड्युल हो. प्रोसेसर निर्देशन वा डेटाको लागि पर्खिरहेको बेला यसले प्रोसेसरको कार्यसम्पादनलाई अधिकतम बनाउँछ. L2 क्यास सञ्चालनको लागि प्रयोग गरिन्छ […]

A-DATA Vitesta DDR600 Viesta Memory, in DDR SDRAM memory modules, firstly achieved 600Mhz clock speed with Samsung TCCD memory chips. The data capacity of A-data Viesta was 512MB or 256MB. It was mostly used for ovcrclocking.   Product Name A-DATA Vitesta DDR600 512MB Part Number MDOSSLF3H47A0B1G0Z Manufacturer A-DATA Country of manufacture Taiwan Build Year 2004 Features 184pin Unbuffer […]

KMM591000AN-7 is composed two KM44C1000AJ-7 chips and one KM44C1000CJ-7 chip. KMM591000BN-7 is composed with two KM44C1000BJ-7 chips and one KM44C1000CJ-7 chip. They are 1MB DRAM SIMMs produced by Samsung Electronics. Manufacturing Company : Samsung Electronics Manufactured Year : 1992 / 1993 उत्पादन को देश : South Korea Module Features : 30पिन, SIMM, Parity RAM Memory Capacity […]

उत्पादनको नाम : ELPIDA 2GB 2Rx8 PC3-10600S-9-10-F1 Part Number : EBJ21UE8BFU0-DJ-F Manufacturer : ELPIDA Country of manufacture : Taiwan Build Year/Week : 2010/38 फारम कारक : DDR3 SO-DIMM Features : 204पिन, Non-ECC Memory Capacity : 2GB Max Data Rate : 1333Mbps Voltage : 1.5V Organization : 256M words × 64 bits, 2 ranks Chip Composition : J1108BFBG-DJ-F […]