Product name Samsung DDR3 SDRAM PC3-10600 2GB Memory (1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9 M378B5263DH1) Manufacturer Samsung Electronics Country of manufacture China Build year/week 2010/38 Data Capacity 2GB Clock speed 1333Mhz (PC3-10600) Features 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM Production process technology 40nm Data bits x64 Internal Module banks 8 Komposisi cip data [SEC HCH9 K4B2G0846C] ✕ 8 kerepek […]

Many mainboards, supported early pentium CPU, usually had sync cache memory chips as CPU L2 cache. This sync cache module(COASt; Cache On A Stick) is external memory module used as additional CPU L2 cache. It maximizes the perfomance of the processor while the processor is waiting for instructions or data. L2 cache is used for operating […]

A-DATA Vitesta DDR600 Viesta Memory, in DDR SDRAM memory modules, firstly achieved 600Mhz clock speed with Samsung TCCD memory chips. The data capacity of A-data Viesta was 512MB or 256MB. It was mostly used for ovcrclocking.   Product Name A-DATA Vitesta DDR600 512MB Part Number MDOSSLF3H47A0B1G0Z Manufacturer A-DATA Country of manufacture Taiwan Build Year 2004 Features 184pin Unbuffer […]

KMM591000AN-7 is composed two KM44C1000AJ-7 chips and one KM44C1000CJ-7 chip. KMM591000BN-7 is composed with two KM44C1000BJ-7 chips and one KM44C1000CJ-7 chip. They are 1MB DRAM SIMMs produced by Samsung Electronics. Syarikat pembuatan : Samsung Electronics Manufactured Year : 1992 / 1993 Negara pembuatan : Ciri Modul Korea Selatan : 30sematkan, SIMM, Parity RAM Memory Capacity […]

Nama Produk : ELPIDA 2GB 2Rx8 PC3-10600S-9-10-F1 Nombor Bahagian : Pengeluar EBJ21UE8BFU0-DJ-F : ELPIDA Negara pembuatan : Tahun/Minggu Binaan Taiwan : 2010/38 Faktor Bentuk : Ciri-ciri SO-DIMM DDR3 : 204sematkan, Kapasiti Memori Bukan ECC : 2Kadar Data Maks GB : 1333Voltan Mbps : 1.5V Organisasi : 256Perkataan M × 64 bit, 2 berpangkat Komposisi Cip : J1108BFBG-DJ-F […]