mpanamboatra : Hyundai Electronics Industries Co., Ltd. Taona fanorenana : 1994 Firenena famokarana : Korea Atsimo laharan'ny ampahany : HYM532100AM-70 Form Factor : SIMM Memory type : EDO DRAM Memory Capacity : 4MB Bus type : Fast Page Memory (FPM) Error correction : Non-parity Pins : 72pin Bandwidth : 32bit Latency : 70ns (tRAC) Zintin'aratra […]

Anaran'ny vokatra : Samsung SDRAM 32MB PC66 Part number : KMM366S403BTN-G0 Manufacturer : Samsung Electronics (seg) Firenena famokarana : South Korea Build year/week : 1997/33 Data Capacity : 32MB Clock speed : 66Mhz (PC66) Toetoetra : 168pin, Unbuffered Non-ECC SDRAM DIMM Data chip composition : [KM48S2020BT-G10] ✕ 16 chips VDD : 3.3V

Anaran'ny vokatra : Samsung DDR SDRAM 512MB PC3200 (non-genuine parts) Part number : PC3200U-30331-B2 M368L6423ETM-CCC Manufacturer : Samsung Electronics (seg) Firenena famokarana : South Korea Build year/week : 2003/33 Data Capacity : 512MB Clock speed : 400Mhz (PC3200) Toetoetra : 184pin, Unbuffered Non-ECC DDR SDRAM DIMM Data chip composition : [SEC K4H560838E-TCCC] ✕ 8 chips Data […]

Anaran'ny vokatra : Ekmemory DDR3 SDRAM 2GB 2Rx8 PC3-10600U-9-10-B0 Mpanamboatra : Firenena ekmemory momba ny fanamboarana : Fahaiza-manao ao Korea Atsimo : 2Hafainganam-pandeha famantaranandro GB : 1333Mhz (Pc3-10600) Toetoetra : 240pin, Unbuffer Non-ECC DDR3 SDRAM Dimm Data Chip Composition : [Hafainganam-pandeha famantaranandro GB] ✕ 16 Chips VDD Voltage : 1.5V HomePage : Sokajy://www.ekmemory.com/bbs/view..php?id = dram&tsia = 91

Anaran'ny vokatra Samsung 4GB DDR3 SDRAM PC3-10600 Memory (2Rx8, Pc3-10600u-09-10-A0, seg, Fahaiza-manao ao Korea Atsimo) Mpanamboatra Samsung Samsung (seg) Firenena misy ny fanamboarana Korea Atsimo dia manorina taona / herinandro 2011/31 Data Capacity 4GB Clock hafainganam-pandeha 1333mhz (Pc3-10600) Fahatsiarovana Timing Cl = 9, TRCD = 9, TRP = 9 Manasongadina 240pin, Unbuffer Non-ECC DDR3 SDRAM Dimm Data Bits Bits X64 halaliny / Fikambanana kely 512m / X8 Module anatiny […]