Ražotājs : LG Semicon Co., SIA. Ražošanas valsts : Dienvidkorejas daļas numurs : ? Formas faktors : SIMM funkcijas : 72pin, EDO DRAM, Neparitātes atmiņas ietilpība : 16MB joslas platums : 32bit Ātrums : 60ns(tRAC) spriegums : 5V mikroshēmas sastāvs : GM71C17400CJ6 × 8 Mikroshēmas izgatavošanas gads/nedēļa : 1998/27 Vienas mikroshēmas ietilpība : 4M […]

Product Name EK Memory 2GB DDR SO-DIMM PC2-5300 CL5 Part Number EKM256S74BP8-E6 Manufacturer EK Memory Country of Manufacture Taiwan Chip Build Year/Week 2008/27 Memory Module Type DDR2 SO-DIMM 200 pin Data Capacity 2GB Clock Speed 667Mhz (PC2-5300) Memory Timing CL=5, tRCD=5, tRP=5 Features 200pin Unbuffered Non-ECC Notebook(Laptop) Memory Data Bits x64 Data Chip info EK20908A8A-3EG […]

Product name Samsung 8GB DDR3 SDRAM PC3-12800 8GB DIMM (2Rx8, PC3-12800U-11-12-B1, M378B1G73QH0-CK0) Manufacturer Samsung Electronics Country of manufacture Philippine Build year/week 2014/08 Data Capacity 8GB Clock speed 1600Mhz (PC3-12800) Memory Timing CL=11, tRCD=11, tRP=11 Features 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM Production process technology 20, 30, 40nm Data bits x64 Internal Module banks 8 Pakāpes […]

M368L6423DTM ir 32 M bitu x 64 Dubults datu pārraides ātrums(DDR) SDRAM augsta blīvuma atmiņas modulis, kura pamatā ir attiecīgi piektās paaudzes 256 Mb DDR SDRAM. M368L6423DTM sastāv no sešpadsmit CMOS 32M x 8 bits ar 4banks Double Data Rate SDRAM 66 kontaktu TSOP-II(400milj) iepakojumi, kas uzstādīti uz 184 kontaktu stikla-epoksīda pamatnes. Ir četri 0,1 uF atsaistes kondensatori […]

Samsung Electronics released DDR3 SDRAM modules using the 30nm process technology in July 2010. This RAM module was made by the 40nm process technology. Product name Samsung DDR3 SDRAM PC3-10600 4GB SO-DIMM (2Rx8, PC3-10600S-09-10-F2, M471B5273CH0-CH9) Manufacturer Samsung Electronics (SEC) Country of manufacture China Build year/week 2011/13 Data Capacity 4GB Clock speed 1333Mhz (PC3-10600) Atmiņas laiks […]