Product name Samsung DDR3 SDRAM PC3-10600 2GB Memory (1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9 M378B5263DH1) Manufacturer Samsung Electronics Country of manufacture China Build year/week 2010/38 Data Capacity 2GB Clock speed 1333Mhz (PC3-10600) Features 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM Production process technology 40nm Data bits x64 Internal Module banks 8 Datu mikroshēmas sastāvs [SEC HCH9 K4B2G0846C] ✕ 8 čipsi […]

Many mainboards, supported early pentium CPU, usually had sync cache memory chips as CPU L2 cache. This sync cache module(COASt; Cache On A Stick) is external memory module used as additional CPU L2 cache. It maximizes the perfomance of the processor while the processor is waiting for instructions or data. L2 cache is used for operating […]

A-DATA Viesta DDR600 Viesta Atmiņa, DDR SDRAM atmiņas moduļos, vispirms sasniedza 600Mhz takts frekvenci ar Samsung TCCD atmiņas mikroshēmām. A-data Viesta datu ietilpība bija 512 MB vai 256 MB. To galvenokārt izmantoja ovcrclocking.   Produkta nosaukums A-DATA Vitesta DDR600 512MB daļas numurs MDOSSLF3H47A0B1G0Z Ražotājs A-DATA Ražotājvalsts Taivāna Izgatavošanas gads 2004 Ietver 184pin Unbuffer […]

KMM591000AN-7 is composed two KM44C1000AJ-7 chips and one KM44C1000CJ-7 chip. KMM591000BN-7 is composed with two KM44C1000BJ-7 chips and one KM44C1000CJ-7 chip. They are 1MB DRAM SIMMs produced by Samsung Electronics. Manufacturing Company : Samsung Electronics Manufactured Year : 1992 / 1993 Ražošanas valsts : South Korea Module Features : 30pin, SIMM, Parity RAM Memory Capacity […]

Produkta nosaukums : ELPIDA 2GB 2Rx8 PC3-10600S-9-10-F1 Part Number : EBJ21UE8BFU0-DJ-F Manufacturer : ELPIDA Country of manufacture : Taiwan Build Year/Week : 2010/38 Formas faktors : DDR3 SO-DIMM Features : 204pin, Non-ECC Memory Capacity : 2GB Max Data Rate : 1333Mbps Voltage : 1.5V Organization : 256M words × 64 bits, 2 ranks Chip Composition : J1108BFBG-DJ-F […]