Samsung 512MB PC3200 DDR SDRAM DIMM (CL3, non genuina RAM)

Missae by DeviceLog.com | Missae in DDR SDRAM | Posted on 2013-03-13

3

Samsung DDR 512MB PC3200U-30331-B2 CL3 (non genuina RAM)

Samsung DDR 512MB PC3200U-30331-B2 CL3 underside (non genuina RAM)

  • Product nomen : Samsung DDR SDRAM 512MB PC3200 (non-genuine parts)
  • Pars numerus : PC3200U-30331-B2 M368L6423ETM-CCC
  • Manufacturer : Samsung Electronics (SEC)
  • Patria OPIFICIUM : South Korea
  • Aedificate anno / septimana : 2003/33
  • Data Capacitas : 512MB
  • Horologium celeritas : 400Mhz (PC3200)
  • Features : 184pin, Unbuffered Non-ECC DDR SDRAM DIMM
  • Data compositione chip : [SEC K4H560838E-TCCC] ✕ 8 eu "
  • Data banks : 4 banks
  • Refresh interval : 7.8μs (8K/64ms refresh)
  • Read latancy : 3 clock (CL3)
  • Burst length : 2, 4, 8
  • Burst type : sequential & interleave
  • Maximum burst refresh cycle : 8
  • VDD, VDDQ : 2.6V ± 0.1V

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Comments (3)

Savvas dixit on- 2016-04-25

Is this ddr 1???

Respondere
DeviceLog.com dixit on- 2016-06-02

Yes.

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film western dixit on- 2018-06-19

Thank you and good luck.

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