Product nomen Samsung DDR3 SDRAM PC3-10600 2GB Memoria (1Rx8 PC3-10600U-09-10-A0 M378B5773CH0 - CH9 M378B5263DH1) Product Electronics fabricare patria fabricare Sinis anno aedificate / septimana 2010/38 Data capacitas 2GB Pro celeritate 1333Mhz (PC3-10600) Features 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM Productio processus technologiae 40nm Data frena x64 Module internus ripis 8 Data compositione chip [SEC HCH9 K4B2G0846C] ✕ 8 eu " […]

Multi mainboards, suscepit mane Pentium CPU, plerumque sync cache memoria eu ut CPU L2 cache. Hoc moduli sync cache(COASt; Cache in baculo) moduli memoria externa usus est ut addito CPU L2 cache. Processus perfomance maximizat dum vel instructiones seu notitia processus exspectat. L2 cache adhibetur ad operandi […]

A-DATA Viesta DDR600 Viesta Memoria, DDR SDRAM memoria modulorum, primum effectum 600Mhz horologii celeritatem Samsung TCCD memoria eu. Data facultas A-data Viesta erat 512MB vel 256MB. Maxime propter ovcrclocking.   Product Name A-DATA Vitesta DDR600 512MB Pars Number MDOSSLF3H47A0B1G0Z Manufacturer A-DATA patria fabricare Taiwan aedificate annum 2004 Features 184pin Unbuffer […]

KMM591000AN-7 is composed two KM44C1000AJ-7 chips and one KM44C1000CJ-7 chip. KMM591000BN-7 is composed with two KM44C1000BJ-7 chips and one KM44C1000CJ-7 chip. They are 1MB DRAM SIMMs produced by Samsung Electronics. Vestibulum Company : Samsung Electronics Manufactured Year : 1992 / 1993 Patria OPIFICIUM : South Korea OMNIBUS Features : 30pin, SIMM, Parity RAM Memory Capacity […]

Product Name : ELPIDA 2GB 2Rx8 PC3-10600S-9-10-F1 Part Number : EBJ21UE8BFU0-DJ-F Manufacturer : ELPIDA Country of manufacture : Taiwan Build Year/Week : 2010/38 Forma Factor : DDR3 SO-DIMM Features : 204pin, Non-ECC Memory Capacity : 2GB Max Data Rate : 1333Mbps Voltage : 1.5V Organization : 256M verba 64 frena, 2 ranks Chip Composition : J1108BFBG-DJ-F […]