Çêker : LG Semicon Co., LTD. Welatê çêkirinê : Jimara Koreya Başûr : ? Faktora formê : Taybetmendiyên Simm : 72derzî, EDO DRAM, Kapasîteya bîra ne-parity : 16Band Bandwidth : 32Leza bit : 60Ns(Trac) Woltî : 5Berhevoka V Chip : GM71C17400CJ6 8 Sala Çêkirina Çîp / Heftê : 1998/27 Kapasîteya yek chip : 4M […]

Çêker : Hyundai Electronics Industries Co., LTD. Sala Avakirinê : 1994 Welatê çêkirinê : Jimara Koreya Başûr : HYM532100AM-70 Form Factor : SIMM Memory type : EDO DRAM Memory Capacity : 4MB Bus type : Fast Page Memory (FPM) Error correction : Non-parity Pins : 72pin Bandwidth : 32bit Latency : 70Ns (Trac) Woltî […]

EDO DRAM has temporary memory space for faster data I/O. It is effective when the system cannot receive cache memory support. But if the system has cache memory, the effect of EDO DRAM is little. Çêker : Hyundai Electronics Industries Co., LTD. Sal / Hefteya Avakirinê : 1997/32 Welatê çêkirinê : Koreya (Koreya Başûr) Hejmara Part […]