Manifakti : LG Semicon Co., Ltd. Peyi fabrikasyon : Nimewo Pati Kore di Sid : ? Faktè fòm : SIMM Karakteristik : 72peny, EDO DRAM, Kapasite memwa ki pa Peye-Parite : 16MB Bandwidth : 32ti jan vitès : 60ns(tRAC) Voltage : 5V Chip Konpozisyon : GM71C17400CJ6 × 8 Chip Bati Ane / Semèn : 1998/27 Yon Kapasite Chip : 4M […]

Product Name EK Memory 2GB DDR SO-DIMM PC2-5300 CL5 Part Number EKM256S74BP8-E6 Manufacturer EK Memory Country of Manufacture Taiwan Chip Build Year/Week 2008/27 Memory Module Type DDR2 SO-DIMM 200 pin Data Capacity 2GB Clock Speed 667Mhz (PC2-5300) Memory Timing CL=5, tRCD=5, tRP=5 Features 200pin Unbuffered Non-ECC Notebook(Laptop) Memory Data Bits x64 Data Chip info EK20908A8A-3EG […]

Non pwodwi Samsung 8GB DDR3 SDRAM PC3-12800 8GB DIMM (2Rx8, PC3-12800U-11-12-B1, M378B1G73QH0-CK0) Manifakti Samsung Elektwonik Peyi fabrikasyon Filipin Bati ane / semèn 2014/08 Done Kapasite 8GB Vitès revèy 1600Mhz (PC3-12800) Distribisyon memwa CL=11, tRCD=11, tRP=11 Karakteristik 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM Pwodiksyon teknoloji pwosesis 20, 30, 40nm Data bits x64 Entèn Modil bank 8 Ranje […]

M368L6423DTM a se 32M bit x 64 Double Pousantaj Done(DDR) Modil memwa SDRAM segondè dansite ki baze sou senkyèm jenerasyon 256Mb DDR SDRAM respektivman. M368L6423DTM a konsiste de sèz CMOS 32M x 8 ti jan ak 4banks Double Done To SDRAMs nan 66pin TSOP-II(400mil) pakè yo monte sou yon substra vè-epoxy 184pin. Kat kondansateur dekoupaj 0.1uF yo […]

Samsung Electronics te pibliye modil DDR3 SDRAM lè l sèvi avèk teknoloji pwosesis 30nm an Jiyè 2010. Modil RAM sa a te fèt pa teknoloji pwosesis 40nm. Non pwodwi Samsung DDR3 SDRAM PC3-10600 4GB SO-DIMM (2Rx8, PC3-10600S-09-10-F2, M471B5273CH0-CH9) Manifakti Samsung Elektwonik (SEC) Peyi fabrikasyon Lachin Bati ane / semèn 2011/13 Done Kapasite 4GB Vitès revèy 1333Mhz (PC3-10600) Distribisyon memwa […]