Manifakti : LG Semicon Co., Ltd. Peyi fabrikasyon : Nimewo Pati Kore di Sid : ? Faktè fòm : SIMM Karakteristik : 72peny, EDO DRAM, Kapasite memwa ki pa Peye-Parite : 16MB Bandwidth : 32ti jan vitès : 60ns(tRAC) Voltage : 5V Chip Konpozisyon : GM71C17400CJ6 × 8 Chip Bati Ane / Semèn : 1998/27 Yon Kapasite Chip : 4M […]

Manifakti : Hyundai Elektwonik Industries Co., Ltd. Bati Ane : 1994 Peyi fabrikasyon : Nimewo Pati Kore di Sid : HYM532100AM-70 Form Factor : SIMM Memory type : EDO DRAM Memory Capacity : 4MB Bus type : Memwa paj rapid (FPM) Koreksyon erè : Non-parity Pins : 72pin Bandwidth : 32bit Latency : 70ns (tRAC) Voltage […]

KMM591000AN-7 is composed two KM44C1000AJ-7 chips and one KM44C1000CJ-7 chip. KMM591000BN-7 is composed with two KM44C1000BJ-7 chips and one KM44C1000CJ-7 chip. They are 1MB DRAM SIMMs produced by Samsung Electronics. Konpayi fabrikasyon : Samsung Electronics Manufactured Year : 1992 / 1993 Peyi fabrikasyon : South Korea Module Features : 30peny, SIMM, Parity RAM Memory Capacity […]

EDO DRAM has temporary memory space for faster data I/O. It is effective when the system cannot receive cache memory support. But if the system has cache memory, the effect of EDO DRAM is little. Manifakti : Hyundai Elektwonik Industries Co., Ltd. Konstwi Ane/Semèn : 1997/32 Peyi fabrikasyon : Kore di (Koredisid) Nimewo Pati […]