Nome do produto Samsung 8GB DDR3 SDRAM PC3-12800 8GB DIMM (2Rx8, PC3-12800U-11-12-B1, M378B1G73QH0-CK0) Fabricante Samsung Electronics País de fabricación Filipinas Ano de construción/semana 2014/08 Capacidade de datos 8 GB Velocidade de reloxo 1600 Mhz (PC3-12800) Tempo de memoria CL=11, tRCD=11, tRP=11 Características 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM Tecnoloxía de proceso de produción 20, 30, 40nm Bits de datos x64 Bancos de módulos internos 8 Rangos […]

Placa base Asrock 880GMH-LE/USB3(placa base) admite Socket AM3 AMD Athlon II / CPU Phnome II X2~X6. Ten condensadores de polímero condutor de alta calidade fabricados en Xapón. Nome do produto Asrock 880GMH-LE/USB3 Fabricante Asrock Chipset • Northbridge: AMD 880G • Southbridge: Factor de forma AMD SB710 • Factor de forma Micro ATX (9.6-en × 8,2 polgadas, 24.4cm × 20,8 cm) • Todo Sólido […]

Samsung Electronics released DDR3 SDRAM modules using the 30nm process technology in July 2010. This RAM module was made by the 40nm process technology. Product name Samsung DDR3 SDRAM PC3-10600 4GB SO-DIMM (2Rx8, PC3-10600S-09-10-F2, M471B5273CH0-CH9) Manufacturer Samsung Electronics (SEC) Country of manufacture China Build year/week 2011/13 Data Capacity 4GB Clock speed 1333Mhz (PC3-10600) Temporalización da memoria […]

Nome do produto : EKmemory DDR3 SDRAM 2GB 2Rx8 PC3-10600U-9-10-B0 Manufacturer : EKmemory Country of manufacture : South Korea Data Capacity : 2GB Clock speed : 1333Mhz (PC3-10600) características : 240alfinete, Unbuffer Non-ECC DDR3 SDRAM DIMM Data chip composition : [EKM324L28BP8-13] ✕ 16 chips VDD voltage : 1.5V Homepage : http://www.ekmemory.com/bbs/view.php?id=dram&no=91

Product name Samsung 4GB DDR3 SDRAM PC3-10600 Memory (2Rx8, PC3-10600U-09-10-A0, M378B5273DH0-CH9, M378B5273DH1) Manufacturer Samsung Electronics (SEC) Country of manufacture South Korea Build year/week 2011/31 Data Capacity 4GB Clock speed 1333Mhz (PC3-10600) Memory Timing CL=9, tRCD=9, tRP=9 Features 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM Data bits x64 Depth / Bit organization 512M / x8 Internal Module […]