Samsung 512 MB PC3200 DDR SDRAM DIMM (CL3, RAM non xenuína)

Publicado por DeviceLog.com | Publicado en SDRAM DDR | Publicado en 2013-03-13

3

Samsung DDR 512MB PC3200U-30331-B2 CL3 (RAM non xenuína)

Samsung DDR 512MB PC3200U-30331-B2 CL3 underside (RAM non xenuína)

  • Nome do produto : Samsung DDR SDRAM 512MB PC3200 (non-genuine parts)
  • Part number : PC3200U-30331-B2 M368L6423ETM-CCC
  • Fabricante : Samsung Electronics (SEC)
  • País de fabricación : Corea do sur
  • Build year/week : 2003/33
  • Capacidade de datos : 512MB
  • Velocidade do reloxo : 400Mhz (PC3200)
  • características : 184alfinete, Unbuffered Non-ECC DDR SDRAM DIMM
  • Data chip composition : [SEC K4H560838E-TCCC] ✕ 8 chips
  • Data banks : 4 banks
  • Refresh interval : 7.8μs (8K/64ms refresh)
  • Read latancy : 3 clock (CL3)
  • Burst length : 2, 4, 8
  • Burst type : sequential & interleave
  • Maximum burst refresh cycle : 8
  • VDD, VDDQ : 2.6V ± 0,1 V

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Comentarios (3)

Savvas dixo adiante 2016-04-25

Is this ddr 1???

Responder
DeviceLog.com dixo adiante 2016-06-02

Yes.

Responder
film western dixo adiante 2018-06-19

Thank you and good luck.

Responder

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