Product name Samsung DDR3 SDRAM PC3-10600 2GB Memory (1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9 M378B5263DH1) Manufacturer Samsung Electronics Country of manufacture China Build year/week 2010/38 Data Capacity 2GB Clock speed 1333Mhz (PC3-10600) Features 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM Production process technology 40nm Data bits x64 Internal Module banks 8 Data chip composition [SEC HCH9 K4B2G0846C] ✕ 8 chips […]

Moitas placas base, CPU Pentium inicial compatible, normalmente tiña chips de memoria caché de sincronización como caché L2 da CPU. Este módulo de caché de sincronización(COSTA; Caché nunha vara) é un módulo de memoria externo usado como caché adicional de CPU L2. Maximiza o rendemento do procesador mentres o procesador está á espera de instrucións ou datos. A caché L2 úsase para operar […]

A-DATA Vitesta DDR600 Viesta Memory, in DDR SDRAM memory modules, firstly achieved 600Mhz clock speed with Samsung TCCD memory chips. The data capacity of A-data Viesta was 512MB or 256MB. It was mostly used for ovcrclocking.   Product Name A-DATA Vitesta DDR600 512MB Part Number MDOSSLF3H47A0B1G0Z Manufacturer A-DATA Country of manufacture Taiwan Build Year 2004 Features 184pin Unbuffer […]

KMM591000AN-7 is composed two KM44C1000AJ-7 chips and one KM44C1000CJ-7 chip. KMM591000BN-7 is composed with two KM44C1000BJ-7 chips and one KM44C1000CJ-7 chip. They are 1MB DRAM SIMMs produced by Samsung Electronics. Empresa Manufacturera : Samsung Electronics Manufactured Year : 1992 / 1993 País de fabricación : South Korea Module Features : 30alfinete, SIMM, Parity RAM Memory Capacity […]

Nome do produto : ELPIDA 2GB 2Rx8 PC3-10600S-9-10-F1 Part Number : EBJ21UE8BFU0-DJ-F Manufacturer : ELPIDA Country of manufacture : Taiwan Build Year/Week : 2010/38 Form Factor : DDR3 SO-DIMM Features : 204alfinete, Non-ECC Memory Capacity : 2GB Max Data Rate : 1333Mbps Voltage : 1.5V Organization : 256M words × 64 bits, 2 ranks Chip Composition : J1108BFBG-DJ-F […]