Fabrikatzailea : LG Semicon Co., SL. Fabrikazio-herrialdea : Hego Koreako pieza zenbakia : ? Forma-faktorea : SIMM Ezaugarriak : 72pin, EDO DRAM, Parekidetasunik gabeko memoria-gaitasuna : 16MB banda zabalera : 32bit Abiadura : 60ns(tRAC) Tentsioa : 5V Chip Konposizioa : GM71C17400CJ6 × 8 Txipa Eraikuntza Urtea/Astea : 1998/27 Txip bakarreko edukiera : 4M […]

Fabrikatzailea : Hyundai Electronics Industries Co., SL. Build Year : 1994 Fabrikazio-herrialdea : Hego Koreako pieza zenbakia : HYM532100AM-70 Form Factor : SIMM Memory type : EDO DRAM Memory Capacity : 4MB Bus type : Fast Page Memory (FPM) Error correction : Non-parity Pins : 72pin Bandwidth : 32bit Latency : 70ns (tRAC) Tentsioa […]

KMM591000AN-7 is composed two KM44C1000AJ-7 chips and one KM44C1000CJ-7 chip. KMM591000BN-7 is composed with two KM44C1000BJ-7 chips and one KM44C1000CJ-7 chip. They are 1MB DRAM SIMMs produced by Samsung Electronics. Manufacturing Company : Samsung Electronics Manufactured Year : 1992 / 1993 Fabrikazio-herrialdea : South Korea Module Features : 30pin, SIMM, Parity RAM Memory Capacity […]

EDO DRAM has temporary memory space for faster data I/O. It is effective when the system cannot receive cache memory support. But if the system has cache memory, the effect of EDO DRAM is little. Fabrikatzailea : Hyundai Electronics Industries Co., SL. Eraikitzeko Urtea/Astea : 1997/32 Fabrikazio-herrialdea : Korea (Hego Korea) Zati zenbakia […]