Samsung 2GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (1Rx8, Txina)

Nork argitaratua DeviceLog.com | urtean argitaratua DDR3 SDRAM | An argitaratua 2013-01-09

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Samsung DDR3 SDRAM 2GB 1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9

Product name Samsung DDR3 SDRAM PC3-10600 2GB Memory (1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-CH9 M378B5263DH1) Manufacturer Samsung Electronics Country of manufacture China Build year/week 2010/38 Data Capacity 2GB Clock speed 1333Mhz (PC3-10600) Features 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM Production process technology 40nm Data bits x64 Internal Module banks 8 Datuen txiparen konposizioa [SEC HCH9 K4B2G0846C] ✕ 8 txipak […]

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A-DATA Vitesta 512MB DDR600 DIMM (PC4800)

Nork argitaratua DeviceLog.com | urtean argitaratua DDR SDRAM | An argitaratua 2012-10-25

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A-DATA Viesta DDR600 Viesta memoria, DDR SDRAM memoria moduluetan, lehenik, 600Mhz-ko erloju-abiadura lortu zuen Samsung TCCD memoria txipekin. A-data Viestaren datu-gaitasuna 512 MB edo 256 MB zen. Gehienbat ovcrclock egiteko erabiltzen zen.   Produktuaren izena A-DATA Vitesta DDR600 512MB Parte-zenbakia MDOSSLF3H47A0B1G0Z Fabrikatzailea A-DATA Fabrikazio-herrialdea Taiwan Eraikuntza-urtea 2004 Ezaugarriak 184pin Unbuffer […]

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Samsung 1MB dram 30pin Simm

Nork argitaratua DeviceLog.com | urtean argitaratua Jatorrizko DRAM | An argitaratua 2012-05-18

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Samsung 1MB Dram Simm Atzera (Kmm591000-7, Kmm591000bn-7) (Km44c1000aj-7, Km44c1000bj-7)

KMM591000AN-7 is composed two KM44C1000AJ-7 chips and one KM44C1000CJ-7 chip. KMM591000BN-7 is composed with two KM44C1000BJ-7 chips and one KM44C1000CJ-7 chip. They are 1MB DRAM SIMMs produced by Samsung Electronics. Manufacturing Company : Samsung Electronics Manufactured Year : 1992 / 1993 Fabrikazio-herrialdea : South Korea Module Features : 30pin, SIMM, Parity RAM Memory Capacity […]

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ELPIDA 2GB DDR3 SDRAM SDRAM SDM SO-DIMM PC3-10600S-9-10-F1

Nork argitaratua DeviceLog.com | urtean argitaratua DDR3 SDRAM | An argitaratua 2012-03-09

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ELPIDA DDR3 2GB 2RX8 PC10600-9-10-10-F1 fondside

produktuaren izena : ELPIDA 2GB 2Rx8 PC3-10600S-9-10-F1 Part Number : EBJ21UE8BFU0-DJ-F Manufacturer : ELPIDA Country of manufacture : Taiwan Build Year/Week : 2010/38 Forma-faktorea : DDR3 SO-DIMM Features : 204pin, Non-ECC Memory Capacity : 2GB Max Data Rate : 1333Mbps Voltage : 1.5V Organization : 256M words × 64 bits, 2 ranks Chip Composition : J1108BFBG-DJ-F […]

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Hyundai 16MB EDO DRAM 72pin SIMM (HYM532414)

Nork argitaratua DeviceLog.com | urtean argitaratua EDO DRAM | An argitaratua 2011-08-04

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Hyundai 72pin 16MB DRAM SIMM HY5117404B (Frontside)

EDO DRAM has temporary memory space for faster data I/O. It is effective when the system cannot receive cache memory support. But if the system has cache memory, the effect of EDO DRAM is little. Fabrikatzailea : Hyundai Electronics Industries Co., SL. Eraikitzeko Urtea/Astea : 1997/32 Fabrikazio-herrialdea : Korea (Hego Korea) Zati zenbakia […]

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