fabricant : Hyundai Electronics Industries Co., Ltd. Build Year : 1994 Païs de manufactura : Número de peça de Corea del Sud : HYM532100AM-70 Form Factor : SIMM Memory type : EDO DRAM Memory Capacity : 4MB Bus type : Fast Page Memory (FPM) Error correction : Non-parity Pins : 72pin Bandwidth : 32bit Latency : 70ns (TRAC) Voltatge […]

Nom del producte : Fabricant EKmemory DDR3 SDRAM 2GB 2Rx8 PC3-10600U-9-10-B0 : EKmemory País de fabricació : Capacitat de dades de Corea del Sud : 2GB Velocitat de rellotge : 1333mhz (PC3-10600) Característiques : 240agulla, Unbuffer No ECC DDR3 SDRAM DIMM Composició de xips de dades : [EKM324L28BP8-13] ✕ 16 xips de tensió VDD : 1.5V Pàgina inicial : http://www.ekmemory.com/bbs/view.php?id = dram&no = 91

KMM591000AN-7 es compon de dues KM44C1000AJ-7 xips i un xip KM44C1000CJ-7. KMM591000BN-7 es compon amb dos KM44C1000BJ-7 xips i un xip KM44C1000CJ-7. Són 1 MB de DRAM SIMM produïts per Samsung Electronics. Manufacturing Company : Samsung Electronics Manufactured Year : 1992 / 1993 Païs de manufactura : South Korea Module Features : 30agulla, SIMM, Parity RAM Memory Capacity […]

EDO DRAM has temporary memory space for faster data I/O. It is effective when the system cannot receive cache memory support. But if the system has cache memory, the effect of EDO DRAM is little. fabricant : Hyundai Electronics Industries Co., Ltd. Any de l'entitat / Setmana : 1997/32 Païs de manufactura : Corea (Corea del Sud) Nombre de peça […]

This RAM is 30-pin 1MB SIMM produced by Hyundai Electronics industry(Hynix of now). 30-pin SIMMs were used universally from 80286 a 80486. If the number of chips is odd number, one of the chips perform parity check. This RAM is composed of two HY514400A(1M x 4bit) and one HY531000A(1M x 1bit). The memory capacity of […]