Samsung 512MB PC2700 DDR SDRAM DIMM (M368L6423DTM)

publicat per DeviceLog.com | publicat a DDR SDRAM | posat en 2015-03-03

0

The M368L6423DTM is 32M bit x 64 Double Data Rate(DDR) SDRAM high density memory module based on fifth genernation of 256Mb DDR SDRAM respectively. The M368L6423DTM consists of sixteen CMOS 32M x 8 bit with 4banks Double Data Rate SDRAMs in 66pin TSOP-II(400mil) packages mounted on a 184pin glass-epoxy substrate. Four 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each DDR SDRAM. The M368L6423DTM Dual In-line Memory Module and is intended for mounting into 184pin edge connector sockets.

Samsung 256MB PC2700 DDR SDRAM DIMM (M368L6423DTM) Samsung 256MB PC2700 DDR SDRAM DIMM (M368L6423DTM)

Nom del producte Samsung DDR SDRAM PC2700 512MB DIMM
(PC2700U-25331B2, M368L6423DTM)
fabricant Samsung Electronics
Païs de manufactura Corea
Construir any / setmana 2003/12
Capacitat de dades 512MB
Velocitat del rellotge 166mhz (PC2700, DDR333)
sincronització de la memòria CL=2.5
Característiques 184agulla, DIMM, Unbuffer Non-ECC DDR SDRAM
Mida 133.35mm × 31.75mm
Bit de dades 64poc
Bancs de mòduls interns 4
Composició de xips de dades K4H560838D-TCB3 × 16
(32M × 8bit × 16chips)
paquet TSOP-II
Tensió de VDD 2.5V ± 0.2V
Cas de funcionament Temperatura Rang 0° C ~ 85 ° C

Articles Relacionats:

A-DATA Vitesta 512MB DDR600 DIMM (PC4800) Samsung 512MB PC3200 DDR SDRAM DIMM (CL3, que no siguin o RAM) EKmemory 2 GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (2RX8) Samsung 32MB SDRAM DIMM PC66 (KMM366S403BTN-G0) Samsung 8GB DDR3 SDRAM 2R × 8 PC3-12800U-11-12-B1-M378B1G73QH0 CK0 1408Samsung 8GB PC3-12800 DDR3 SDRAM DIMM (2R × 8, M378B1G73QH0-CK0) Samsung 16 MB SDRAM PC66 DIMM (KMM366S203CTL-G0)Samsung 16 MB SDRAM DIMM PC66 (KMM366S203CTL-G0) Samsung SDRAM DDR3 de 2GB 1Rx8 PC3-10600U-09-10-A0 M378B5773CH0-ch9Samsung 2 GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (1RX8, Xina) Samsung 4 GB DDR3 2RX8 PC3-10600U-09-11-B1 M378B5273DH0-ch9 1131Samsung 4 GB DDR3 SDRAM DIMM PC3-10600 1333Mhz (2RX8, Corea) Samsung 4 GB PC3-10600 DDR3 SDRAM SO-DIMM Samsung 2 GB de memòria SDRAM DDR2 PC2-6400 2RX8 (M378T5663QZ3-CF7)PC2-6400 Samsung 2 GB DDR2 SDRAM DIMM 2RX8 (M378T5663QZ3-CF7) DIMM de 8 GB SAMSUNG DDR4 SDRAM (1Rx8_PC4-21300, PC4-2666V-UA2-11, 1828)PC4-21300 8GB Samsung DDR4 SDRAM UDIMM 1Rx8 (PC4-2666V-UA2-11) (M378A1K43CB2-CTD) SAMSUNG DDR4 SDRAM de 16 GB PC4-21300 1906PC4-21300 16GB Samsung DDR4 SDRAM UDIMM 2RX8 (PC4-2666V-UB1-11) (M378A2K43CB1-CTD) ELPIDA DDR3 de 2GB 2RX8 PC10600-9-10-F1 FrontsideElpida 2 GB DDR3 SDRAM SO-DIMM PC3-10600S-9-10-F1 Samsung HD154UI 1.5GBSamsung Spinpoint F2EG HD154UI 1.5TB Galaxy S4 LTE-A ③Samsung Galaxy S4 LTE-A (SHV-E330S) Samsung Galaxy S (SHW-M110S) ImatgeSamsaung Galaxy S (SHW-M110S) Macronix MX86200 - SiS 6202Macronix MX86200 (SiS 6202) Memòria EK 2 GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6Memòria EK 2 GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6 LGS GM71C17400CJ6 16 MB EDO-DRAM SIMM frontalLG Semicon 16 MB EDO-DRAM SIMM de 72 pins (GM71C17400CJ6) LG Semicon 16 MB SDRAM DIMM PC66 (GMM2642233BLTG-10K 7101S)
etiquetes:, , , , , , , , , , ,

Escriu un comentari