Samsung 512MB PC3200 DDR SDRAM DIMM (CL3, que no siguin o RAM)

publicat per DeviceLog.com | publicat a DDR SDRAM | posat en 2013-03-13

3

Samsung DDR 512MB PC3200U-30331-B2 CL3 (que no siguin o RAM)

Samsung DDR 512MB PC3200U-30331-B2 CL3 underside (que no siguin o RAM)

  • Nom del producte : Samsung DDR SDRAM 512MB PC3200 (non-genuine parts)
  • Número de peça : PC3200U-30331-B2 M368L6423ETM-CCC
  • fabricant : Samsung Electronics (SEC)
  • Païs de manufactura : Corea del Sud
  • Construir any / setmana : 2003/33
  • Capacitat de dades : 512MB
  • Velocitat del rellotge : 400mhz (PC3200)
  • Característiques : 184agulla, Unbuffered Non-ECC DDR SDRAM DIMM
  • Composició de xips de dades : [SEC K4H560838E-TCCC] ✕ 8 xips
  • Data banks : 4 banks
  • Refresh interval : 7.8μs (8K/64ms refresh)
  • Read latancy : 3 clock (CL3)
  • Burst length : 2, 4, 8
  • Burst type : sequential & interleave
  • Maximum burst refresh cycle : 8
  • VDD, VDDQ : 2.60,1 V V ±

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Comentaris (3)

Savvas va dir el 2016-04-25

Is this ddr 1???

respondre
DeviceLog.com va dir el 2016-06-02

Yes.

respondre
film western va dir el 2018-06-19

Thank you and good luck.

respondre

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